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Extra info for CCD Image Sensors in Deep-Ultraviolet: Degradation Behavior and Damage Mechanisms (Microtechnology and MEMS)
Typically, the thickness of a front-illuminated CCD is approximately 500 µm, compared to the thickness of a back-illuminated device which is whittled down to 45 µm or less . The simpliﬁed structure of a backside-thinned back-illuminated photogate-based 36 3 CCD Imaging in the Ultraviolet (UV) Regime Incoming Photons Antireflective (AR) Coating p-Type Silicon n-Type Silicon Silicon Dioxide (SiO2) Insulating Layer Polysilicon Electrodes Fig. 7. The cross-section of a backside-thinned back-illuminated CCD sensor with photogates arranged in an area array format CCD is displayed in Fig.
After the measurement of each charge packet, the n+ diﬀusion region is reset by draining away any residual charges; this ensures that the residual charges do not disturb the measurement of the next charge packet. The reset operation is accomplished by connecting the n+ ﬂoating diﬀusion node to a positive supply voltage via a reset transistor; here, the reset transistor acts as a switch and is controlled by a reset clock pulse. The voltage on the ﬂoating diﬀusion output is sensed by a source-follower ampliﬁer stage, which is then fed to the outside world.
Since an increasing number of industrial applications are shifting to intense DUV sources, this trend necessitates the development of high performance DUV sensors for process control and monitoring purposes. Examples of DUV imaging applications include semiconductor lithography systems, micromachining, wafer inspection, UV spectroscopy, microscopy, water treatment, and ﬂame monitoring. Electronic imaging with CCD cameras are preferable in these applications, because the CCD technology is mature and it oﬀers a digital imaging solution with high speed, high resolution and low noise capabilities.